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ZXM64N02X
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V (BR)DSS
20
V
I D =250 μ A, V GS =0V
Zero Gate Voltage Drain Current
I DSS
1
μ A
V DS =20V, V GS =0V
Gate-Body Leakage
I GSS
100
nA
V GS = ± 12V, V DS =0V
Gate-Source Threshold Voltage
V GS(th)
0.7
V
I D =250 μ A, V DS = V GS
Static Drain-Source On-State Resistance
(1)
R DS(on)
0.040
0.050
?
?
V GS =4.5V, I D =3.8A
V GS =2.7V, I D =1.9A
Forward Transconductance (3)
g fs
6.1
S
V DS =10V,I D =1.9A
DYNAMIC (3)
Input Capacitance
C iss
1100
pF
Output Capacitance
C oss
350
pF
V DS =15 V, V GS =0V,
f=1MHz
Reverse Transfer Capacitance
C rss
100
pF
SWITCHING(2) (3)
Turn-On Delay Time
t d(on)
5.7
ns
Rise Time
Turn-Off Delay Time
t r
t d(off)
9.6
28.3
ns
ns
V DD =10V, I D =3.8A
R G =6.2 ? , R D =2.6 ?
(Refer to test
Fall Time
t f
11.6
ns
circuit)
Total Gate Charge
Q g
16
nC
Gate-Source Charge
Q gs
3.5
nC
V DS =16V,V GS =4.5V,
I D =3.8A
Gate Drain Charge
Q gd
5.4
nC
(Refer to test
circuit)
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V SD
0.95
V
T j =25°C, I S =3.8A,
V GS =0V
Reverse Recovery Time (3)
Reverse Recovery Charge(3)
t rr
Q rr
23.7
13.3
ns
nC
T j =25°C, I F =3.8A,
di/dt= 100A/ μ s
(1) Measured under pulsed conditions. Width=300 μ s. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
I ssue 2 - February 2008
4
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